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MT4100 - Dual N- & P-Channel Power MOSFET

General Description

These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Key Features

  • RDS (ON) = 185m Ω @ VGS = -10V General.

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Datasheet Details

Part number MT4100
Manufacturer MT Semiconductor
File Size 1.01 MB
Description Dual N- & P-Channel Power MOSFET
Datasheet download datasheet MT4100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT4100 Dual N & P-Channel Po werTrench® MOSFET  Features RDS (ON) = 185m Ω @ VGS = -10V General Description These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.