MT4100 Datasheet | MT Semiconductor

Dual N & P-Channel Po werTrench® MOSFET Features RDS (ON) = 185m Ω @ VGS = -10V General Description These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. $SSOLFDWLRQV ‡ '&'&SULPDUEULGJH ‡ '&'&6QFKURQRXVUHFWLILFDWLRQ ‡ +RWVZDS...