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MT4613 - Dual N- & P-Channel Power MOSFET

Key Features

  • ‡ N-Channel 20V/5A R DS(on) = 0.017Ω @ VGS = 4.5V R DS(on) = 0.020Ω @ VGS = 2.5V ‡ P-Channel -15V/-4.5A R DS(on) = 0.028Ω @ VGS = -4.5V R DS(on) = 0.038Ω @ VGS = -2.5V  5 4 6 3 7 2 8 1 DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S S Absolute Maximum Ratings(TA = 25 unless otherwise noted) Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1) Power Dissipation for Dual Operation (Note 1) Power Dis.

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Datasheet Details

Part number MT4613
Manufacturer MT Semiconductor
File Size 2.63 MB
Description Dual N- & P-Channel Power MOSFET
Datasheet download datasheet MT4613 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT4613 Dual N & P-Channel PowerTrench® MOSFET *HQHUDO'HVFULSWLRQ These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features ‡ N-Channel 20V/5A R DS(on) = 0.017Ω @ VGS = 4.5V R DS(on) = 0.020Ω @ VGS = 2.5V ‡ P-Channel -15V/-4.5A R DS(on) = 0.028Ω @ VGS = -4.5V R DS(on) = 0.038Ω @ VGS = -2.