MT4832 - 30V 10A Dual N-Channel MOSFET

MT Semiconductor

Key Features

High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. D1 D2 G1 G2 S1 S2 $.

MT4832 30v 10a dual n-channel mosfet by MT Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT4832
Manufacturer	MT Semiconductor
File Size	1.51 MB
Description	30V 10A Dual N-Channel MOSFET
Datasheet	MT4832 Datasheet

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MT4832 30V 10A Dual N-Channel MOSFET Product Summary VDS=30V RDS(ON) = 10mΩ @VGS=10V,ID=5A RDS(ON) =12mΩ @VGS =4.5V,ID=4A Features High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. D1 D2 G1 G2 S1 S2 $SSOLFDWLRQV Switching Applications. Absolute Maximum Ratings(TA = 25 unless otherwise noted) Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 SO-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.