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MT4832
30V 10A Dual N-Channel MOSFET
Product Summary
VDS=30V RDS(ON) = 10mΩ @VGS=10V,ID=5A RDS(ON) =12mΩ @VGS =4.5V,ID=4A
Features
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
D1
D2
G1
G2
S1
S2
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Switching Applications.
Absolute Maximum Ratings(TA = 25 unless otherwise noted)
Top View
S2 1 G2 2 S1 3 G1 4
8 D2
7
D2
6 D1
5 D1
SO-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.
MT4832 Datasheet
