MT60P25S - P-Channel MOSFET

MT Semiconductor

Key Features

@VGS= - 4.5V @VGS= -10V Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. $.

MT60P25S p-channel mosfet by MT Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT60P25S
Manufacturer	MT Semiconductor
File Size	540.49 KB
Description	P-Channel MOSFET
Datasheet	MT60P25S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MT60P25S 3&KDQQHO(QKDQF HPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary VDS = - 60V I D = - 40A(VGS= -10V) RDS(ON) 31 m RDS(ON) 25 m Features @VGS= - 4.5V @VGS= -10V Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant.