• Part: MT60P25S
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 540.49 KB
Download MT60P25S Datasheet PDF
MT Semiconductor
MT60P25S
Features @VGS= - 4.5V @VGS= -10V ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. ‡ Ro HS pliant. $SSOLFDWLRQV ‡ High side switch for full bridge converter ‡ DC/DC converter for LCD display Absolute Maximum Ratings (TA = 25 unless otherwise noted) TO-252-2L Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100ć) Pulsed Drain Current Maximum Power Dissipation (TC =25 ć) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100ć) IDM PD TJ,TSTG Limit -60 ±20 -40 -25 -150 83 0.72 193 -55 To 150 Thermal Characteristic Thermal Resistance, Junction-to-Case(Note 2) Package Marking and Ordering Information Device Marking Device Device Package TO-252-2L RșJC Reel Size - Tape width - Unit V V A A A W W/ć m J...