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MT6339N3 - 60V 8A MOSFET

General Description

MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Key Features

  • N-channel P-channel VDS (V) = 60V -60V ID = 8A (VGS =10V) -8A (VGS = -10V) G1 RDS(ON) =35m Ω (VGS=10V) =40m Ω (VGS=4.5V) RDS(ON) =64mΩ (VGS = -10V) =75mΩ (VGS = -4.5V) 100% Rg tested DFN3X3-8L  D1 D2 G2 S1 S2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 60 -60 Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C VGS ±20 ±20 8 -8 ID 8.

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Datasheet Details

Part number MT6339N3
Manufacturer MT Semiconductor
File Size 1.25 MB
Description 60V 8A MOSFET
Datasheet download datasheet MT6339N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT6339N3 6M0oVd/ 8eAFiCeoldmEpflfeemcteTnrtaanrysiEsntohrancement General Description The MT6339N3 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features N-channel P-channel VDS (V) = 60V -60V ID = 8A (VGS =10V) -8A (VGS = -10V) G1 RDS(ON) =35m Ω (VGS=10V) =40m Ω (VGS=4.5V) RDS(ON) =64mΩ (VGS = -10V) =75mΩ (VGS = -4.