MT8102 - P-Channel MOSFET

MT Semiconductor

Key Features

R DS(on) = 6.0m: ( Max. )@ VGS = -10V, I D = -20A R DS(on) = 9.7m:( Max. )@ VGS = -4.5V, I D = -15A Extended VGS range (-25V) for battery.

MT8102 p-channel mosfet by MT Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT8102
Manufacturer	MT Semiconductor
File Size	898.29 KB
Description	P-Channel MOSFET
Datasheet	MT8102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MT8102 P-Channel MOSFE T -30V, -15A, 6.0m: *HQHUDO'HVFULSWLRQ This N-channel MOSFET is produced using MOS-TECH Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance This device is well suited for Power Management and Load switching applications common in Notebook computers and Portable Battery Packs. Features R DS(on) = 6.0m: ( Max.)@ VGS = -10V, I D = -20A R DS(on) = 9.7m:( Max.)@ VGS = -4.