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MT81P03 - P-Channel MOSFET

Key Features

  • ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. D ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT81P03
Manufacturer MT Semiconductor
File Size 289.20 KB
Description P-Channel MOSFET
Datasheet download datasheet MT81P03 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT81P03  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary  ‡ VDS= -30V ‡ ID= -80A (VGS= -10V) ‡ RDS(ON) 10m ‡ RDS(ON) 13m @VGS= -10V @VGS= -4.5V Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. D ‡ RoHS Compliant.