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MT82P03N3 - P-Channel MOSFET

Key Features

  • Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT82P03N3
Manufacturer MT Semiconductor
File Size 388.66 KB
Description P-Channel MOSFET
Datasheet download datasheet MT82P03N3 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT82P03N3  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -20V ‡ ID= -40A ‡ RDS(ON) 9 m ‡ RDS(ON) 13 m @VGS = -4.5V @VGS= -2.5V  Features Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack DFN3X3-8L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG PIN1 Limit -20 ±12 -40 -90 2.