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MT82P50N3
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Product Summary
V DS= -20V ID = -50A RDS(ON) = 5.5m @VGS= -10V RDS(ON) = 6.5m @VGS= -4.5V RDS(ON) = 8.0m @VGS= -2.5V RDS(ON) = 10 m @VGS = -1.8V
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant.
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Notebook Computer Portable Battery Pack
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol VDS VGS ID IDM PD
TJ,TSTG
DFN3X3-8L
Limit
-20 ±12 -50 -150 2.
MT82P50N3 Datasheet
