• Part: MT83P06N3
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 281.35 KB
Download MT83P06N3 Datasheet PDF
MT Semiconductor
MT83P06N3
Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ Ro HS pliant. $SSOLFDWLRQV ‡ Notebook puter ‡Portable Battery Pack Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter 10s Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 -47 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 -2.7 Maximum Power Dissipation 1 TJ, Tstg Operating Junction and Storage Temperature Range Thermal Resistance Ratings PIN1 Steady State -30 ±20 -40 -50 -1.36 1.5 -55 to 150 Units V V A A A W Symbol Parameter Rth JA Maximum Junction-to-Ambient 1 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. t 10 Sec Steady...