MT83P06N3
Features
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Ro HS pliant.
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Notebook puter Portable Battery Pack
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
Parameter
10s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
-47
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
-2.7
Maximum Power Dissipation 1
TJ, Tstg Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
PIN1 Steady State -30 ±20
-40 -50
-1.36 1.5 -55 to 150
Units
V V A A A W
Symbol
Parameter
Rth JA
Maximum Junction-to-Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t 10 Sec Steady...