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MT83P06N3 - P-Channel MOSFET

Features

  • ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT83P06N3
Manufacturer MT Semiconductor
File Size 281.35 KB
Description P-Channel MOSFET
Datasheet download datasheet MT83P06N3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT83P06N3  3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary  ‡ VDS= -30V ‡ ID= -40A ‡ RDS(ON) 12m @VGS= -10V ‡ RDS(ON) 16.0m @VGS= -4.5V Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low ‡ On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $SSOLFDWLRQV ‡ Notebook Computer ‡Portable Battery Pack Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter 10s VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current 1 -47 IDM Pulsed Drain Current 2 IS Continuous Source Current (Diode Conduction) 1 -2.7 PD Maximum Power Dissipation 1 3.
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