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MwT-PH11FV - 12-GHz High Power AlGaAs/InGaAs pHEMT

This page provides the datasheet information for the MwT-PH11FV, a member of the MwT-PH11F 12-GHz High Power AlGaAs/InGaAs pHEMT family.

Description

The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.

Features

  • 33 dBm of Power at 12 GHz.
  • 12 dB Small Signal Gain at 12 GHz.
  • 45% PAE at 12 GHz.
  • 0.25 x 2400 Micron Refractory Metal/Gold Gate.
  • Excellent for High Power, and High Power Added Efficiency.
  • Ideal for Commercial, Military, Hi-Rel Space.

📥 Download Datasheet

Datasheet preview – MwT-PH11FV

Datasheet Details

Part number MwT-PH11FV
Manufacturer MWT
File Size 1.86 MB
Description 12-GHz High Power AlGaAs/InGaAs pHEMT
Datasheet download datasheet MwT-PH11FV Datasheet
Additional preview pages of the MwT-PH11FV datasheet.

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Full PDF Text Transcription

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12 GHz • 0.25 x 2400 Micron Refractory Metal/Gold Gate • Excellent for High Power, and High Power Added Efficiency • Ideal for Commercial, Military, Hi-Rel Space Applications • Available with or without via holes Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns Description: The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.
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