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MX26L12811MC - 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY

General Description

The MXIC's MX26L12811MC series MTP use the most advance 2 bits/cell Nbit technology, double the storage capacity of memory cell.

The device provide the high density MTP memory solution with reliable performance and most cost-effective.

The device organized as by 8 bits or by 16 bits of output bus.

Key Features

  • 3.0V to 3.6V operation voltage.
  • Block Structure - 128 x 128Kbyte Erase Blocks.
  • Fast random / page mode access time - 120/25 ns Read Access Time (page depth:4-word).
  • 32-Byte Write Buffer www. DataSheet4U. com - 6 us/byte Effective Programming Time.
  • High Performance - Block erase time: 2s typ. - Byte programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command).
  • Program/Erase Endurance cycles: 10 cycles Packag.

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Datasheet Details

Part number MX26L12811MC
Manufacturer Macronix
File Size 305.39 KB
Description 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY
Datasheet download datasheet MX26L12811MC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX26L12811MC 128M [x8/x16] SINGLE 3V PAGE MODE MTP MEMORY FEATURES • 3.0V to 3.6V operation voltage • Block Structure - 128 x 128Kbyte Erase Blocks • Fast random / page mode access time - 120/25 ns Read Access Time (page depth:4-word) • 32-Byte Write Buffer www.DataSheet4U.com - 6 us/byte Effective Programming Time • High Performance - Block erase time: 2s typ. - Byte programming time: 210us typ. - Block programming time: 0.8s typ. (using Write to Buffer Command) • Program/Erase Endurance cycles: 10 cycles Packaging Performance • Low power dissipation - typical 15mA active current for page mode read - 80uA/(max.) standby current - 44-Lead SOP Technology - Nbit (0.