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March 2011 PRELIMINARY
MM9N090P
900V 9A N-Channel MOSFET RoHS Compliant
FEATURES
□ Low drain-source ON resistance □ High forward transfer admittance □ Repetitive avalanche ratings □ Simple drive requirements □ Ease of paralleling
APPLICATIONS
□ Switching power supplies □ Motor controls □ Inverters and choppers □ Audio amplifiers and energy pulse circuits
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V DSS
Drain - Source Voltage
V GSS
Gate - Source Voltage
ID Continuous Drain Current
I DM PD E AS I AR E AR TJ T STG Weight
Pulsed Drain Current Maximum Power Dissipation Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction Storage Temperature Range
1.GATE 2.DRAIN 3.