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MMG100S170B6EN - IGBT

Datasheet Summary

Features

  • IGBT3 CHIP(1700V Trench+Field Stop technology).
  • Low turn-off losses, short tail current.
  • VCE(sat) with positive temperature coefficient.
  • DIODE CHIP(1700V EMCON 3 technology).
  • Free wheeling diodes with fast and soft reverse recovery MMG100S170B6EN 1700V 100A IGBT Module Version 01 RoHS Compliant.

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Datasheet Details

Part number MMG100S170B6EN
Manufacturer MacMic
File Size 171.29 KB
Description IGBT
Datasheet download datasheet MMG100S170B6EN Datasheet
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April 2015 PRODUCT FEATURES □ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery MMG100S170B6EN 1700V 100A IGBT Module Version 01 RoHS Compliant APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless otherwise specified Values Unit 1700 V ±20 150 100 A 200 66
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