MMG150CE065PD6TC Datasheet PDF

FEATURES

□ 650V IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included

APPLICATIONS

□ 3-Level-

APPLICATIONS

□ Solar

APPLICATIONS

□ UPS Systems IGBT(T1、T2、T3、T4)

ABSOLUTE MAXIMUM RATINGS

(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃,TJmax=175℃ TC=25℃,TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃,TJmax=175℃ Diode(D1、D2、D3、D4、D5、D6)

ABSOLUTE MAXIMUM RATINGS

(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 650 V ±20 150 150 A 300 335 W Values Unit 650 V 150 A 300 1700 A2S MacMic Science & Technology Co., Ltd.