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August 2019
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included
APPLICATIONS
□ Welding Machine □ Power Supplies □ Others
MMG150S120B6UC
Version 01
1200V 150A IGBT Module RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES VGES
Collector Emitter Voltage Gate Emitter Voltage
TJ=25℃
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25℃,TJmax=175℃ TC=100℃,TJmax=175℃ tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=175℃
Values
Unit
1200 V
±20
238
150
A
300
1000
W
Diode-invert
MMG150S120B6UC Datasheet
