MMG400K120U6HN
FEATURES
- High short circuit capability,self limiting short circuit current
- IGBT CHIP(T4 Fast Trench+Field Stop technology)
- VCE(sat) with positive temperature coefficient
- Fast switching and short tail current
- Free wheeling diodes with fast and soft reverse recovery
- Low switching losses
- 5K Ω Gate Protected Resistance Inside
APPLICATIONS
- High frequency switching application
- Medical applications
- Motion/servo control
- UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
DC Collector Current
TC=25℃ TC=90℃
Repetitive Peak Collector Current tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
±20
Reverse-Diode
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
T C =25°C unless otherwise...
