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April 2015
MMG50S120B6HN
1200V 50A IGBT Module
Version 01
RoHS Compliant
PRODUCT FEATURES
□ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses □ TJmax =175°C
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES IC
Gate Emitter Voltage DC Collector Current
TC=25℃ TC=95℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless othe
MMG50S120B6HN Datasheet
