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April 2015
PRODUCT FEATURES
□ IGBT3 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery
MMG50S170B6EN
Version 01
1700V 50A IGBT Module RoHS Compliant
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25℃
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25℃ TC=95℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
T C =25°C unless otherwise specified
Values
Unit
1700 V
±20
75
50
A
100
410
W
MMG50S170B6EN Datasheet
