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MMG600WB170B6E4N - IGBT

Key Features

  • IGBT4 CHIP(1700V Trench+Field Stop technology).
  • Low turn-off losses, short tail current.
  • VCE(sat) with positive temperature coefficient.
  • DIODE CHIP(1700V EMCON 3 technology).
  • Free wheeling diodes with fast and soft reverse recovery.
  • Temperature sense included.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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March 2020 PRODUCT FEATURES □ IGBT4 CHIP(1700V Trench+Field Stop technology) □ Low turn-off losses, short tail current □ VCE(sat) with positive temperature coefficient □ DIODE CHIP(1700V EMCON 3 technology) □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fuel cell MMG600WB170B6E4N Version 01 1700V 600A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES VGES Collector Emitter Voltage Gate Emitter Voltage TJ=25℃ IC DC Collector Current ICM Repetitive Peak Collector Current TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ tp=1ms Ptot Power Dissipation Per IGB