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MMG75S120B6HN - IGBT

Key Features

  • High short circuit capability,self limiting short circuit current.
  • IGBT CHIP(T4 Fast Trench+Field Stop technology).
  • VCE(sat) with positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Low switching losses.
  • TJmax =175°C.

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Datasheet Details

Part number MMG75S120B6HN
Manufacturer MacMic
File Size 338.92 KB
Description IGBT
Datasheet download datasheet MMG75S120B6HN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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April 2015 MMG75S120B6HN 1200V 75A IGBT Module Version 01 RoHS Compliant PRODUCT FEATURES □ High short circuit capability,self limiting short circuit current □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses □ TJmax =175°C APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems IGBT-inverter ABSOLUTE MAXIMUM RATINGS Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES IC Gate Emitter Voltage DC Collector Current TC=25℃ TC=95℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT T C =25°C unless othe