26LV800BTC Datasheet | Macronix

FEATURES - Extended single - supply voltage range 3.0V to 3.6V - 1,048,576 x 8/524,288 x 16 switchable - Single power supply operation - 3.0V only operation for read, erase and program operation - Fast access time: 55/70ns - Low power consumption - 30m A maximum active current - 30u A typical standby current - mand register architecture - Byte/word Programming (55us/70us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) - Auto Erase (chip & sector) and Auto Program - Automatically erase any bination of sectors with Erase verify capability. - Automatically program and verify data at specified address - Status Reply - Data# polling & Toggle bit for detection of program and erase operation pletion. - Ready/Busy# pin (RY/BY#) - Provides a hardware method of detecting program or erase operation pletion. - 2,000 minimum erase/program cycles - Latch-up protected to 100m A from -1V to VCC+1V - Boot Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector - Package type: - 48-pin TSOP - 48-ball CSP - patibility with JEDEC standard - Pinout and software patible with single-power supply Flash - 20 years data retention GENERAL DESCRIPTION The MX26LV800T/B is a 8-mega bit high speed Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's high speed Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26LV800T/B is packaged in 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX26LV800T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26LV800T/B has separate chip enable (CE#) and output enable (OE#) controls. MXIC's high speed Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX26LV800T/B uses a mand register to manage this...