Datasheet4U Logo Datasheet4U.com

29F002 - 2M-BIT [256K x 8] CMOS FLASH MEMORY

General Description

The MX29F002T/B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits only.

MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory.

The MX29F002T/B is packaged in 32-pin PDIP,PLCC and 32-pin TSOP(I).

Key Features

  • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automaticall.

📥 Download Datasheet

Datasheet Details

Part number 29F002
Manufacturer Macronix
File Size 911.80 KB
Description 2M-BIT [256K x 8] CMOS FLASH MEMORY
Datasheet download datasheet 29F002 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
29F002 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory STMicroelectronics
29F002 2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory Advanced Micro Devices
29F002 2M (256K X 8) BIT Fujitsu Media Devices Limited
29F010 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only / Uniform Sector Flash Memory Advanced Micro Devices
29F010 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory STMicroelectronics

Other Datasheets by Macronix

Part Number Description
29F001TPC MX29F001TPC
29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM
29F800 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Programming and erasing voltage 5V ± 10% Command register architecture - Byte Programming (7us typical) - Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically programs and verifies data at specified address Erase Suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.