MX26LV040 Datasheet | Macronix

Macronix NBit TM Memory Family 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED e Lite Flash TM MEMORY Features - Extended single - supply voltage range 3.0V to 3.6V - 524,288 x 8 - Single power supply operation - 3.0V only operation for read, erase and program .. operation - Fast access time: 55/70ns - Low power consumption - 30m A maximum active current - 30u A typical standby current - mand register architecture - Byte Programming (55us typical) - Sector Erase (Sector structure 64K-Byte x8) - Auto Erase (chip & sector) and Auto Program - Automatically erase any bination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data# polling & Toggle bit for detection of program and erase operation pletion. 2,000 minimum erase/program cycles Latch-up protected to 100m A from -1V to VCC+1V Package type: - 32-pin PLCC - 32-pin TSOP - 32-pin PDIP patibility with JEDEC standard - Pinout and software patible with single-power supply Flash 20 years data retention - - - - - - GENERAL DESCRIPTION The MX26LV040 is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX26LV040 is packaged in 32-pin PLCC, 32-pin TSOP and 32-pin PDIP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX26LV040 offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26LV040 has separate chip enable (CE#) and output enable (OE#) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX26LV040 uses a mand register to manage this functionality. The mand register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while...