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MX29F200T - 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY

Download the MX29F200T datasheet PDF. This datasheet also covers the MX29F200B variant, as both devices belong to the same 2m-bit [256kx8/128kx16] cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX29F200T/B is a 2-mega bit, single 5 Volt Flash memory organized as 1M word x16 or 2M bytex8 MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29F200T/B is packaged in 44-pin SOP and 48pin TSOP.

Key Features

  • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Programming (7us/12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX29F200B_MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX29F200T
Manufacturer Macronix
File Size 569.27 KB
Description 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
Datasheet download datasheet MX29F200T Datasheet

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Other Datasheets by Macronix

Part Number Description
MX29F200B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CB 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F200CT 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040C 4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz - 1uA typical standby current Command register architecture - Byte/Word Programming (7us/12us typical) - Erase (16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x3) Auto Erase (chip) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically program and verify data at specified address Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion.