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MX29GL128E - FLASH MEMORY

General Description

SYMBOL PIN NAME A0~A22 Q0~Q14 Q15/A-1 CE# WE# OE# RESET# Address Input Data Inputs/Outputs Q15(Word Mode)/LSB addr(Byte Mode) Chip Enable Input Write Enable Input Output Enable Input Hardware Reset Pin, Active Low WP#/ACC Hardware Write Protect/Programming Acceleration input RY/BY# Ready/

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MX29GL128E MX29GL128E DATASHEET P/N:PM1500 REV. 1.8, NOV. 13, 2013 1 MX29GL128E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL128E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC - MX29GL128E U/D: VI/O=1.65V~3.6V for Input/Output • Byte/Word mode switchable - 16,777,216 x 8 / 8,388,608 x 16 • 64KW/128KB uniform sector architecture - 128 equal sectors • 16-byte/8-word page read buffer • 64-byte/32-word write buffer • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable • Advanced sector protection function (Solid and Password Protect) • Latch-up protected to 100mA from -1V to 1.