MX29LV160T Datasheet | Macronix

FEATURES - Extended single - supply voltage range 2.7V to 3.6V - 2,097,152 x 8/1,048,576 x 16 switchable - Single power supply operation - 3.0V only operation for read, erase and program operation - Fast access time: 70/90ns - Low power consumption .. - 30m A maximum active current - 0.2u A typical standby current - mand register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x31) - Auto Erase (chip & sector) and Auto Program - Automatically erase any bination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address - Erase Suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. - Status Reply - Data polling & Toggle bit for detection of program and erase operation pletion. - Ready/Busy pin (RY/BY) - Provides a hardware method of detecting program or erase operation pletion. - Sector protection - Hardware method to disable any bination of sectors from program or erase operations - Temporary sector unprotect allows code changes in previously locked sectors. - CFI (mon Flash Interface) pliant (for MX29LV160AT/AB) - Flash device parameters stored on the device and provide the host system to access - 100,000 minimum erase/program cycles - Latch-up protected to 100m A from -1V to VCC+1V - Boot Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector - Low VCC write inhibit is equal to or less than 1.4V - Package type: - 44-pin SOP - 48-pin TSOP - 48-ball CSP (8x13mm:for MX29LV160T/B; 6x8mm: for MX29LV160AT/AB) - patibility with JEDEC standard - Pinout and software patible with single-power supply Flash power supply levels during erase and programming, while maintaining maximum EPROM patibility. MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the...