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MX29LV401T - (MX29LV401B/T) 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Download the MX29LV401T datasheet PDF (MX29LV401B included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for (mx29lv401b/t) 4m-bit [512k x 8 / 256k x 16] cmos single voltage 3v only flash memory.

Description

The MX29LV401T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits or 256K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29LV401T/B is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP.

Features

  • Extended single - supply voltage range 2.7V to 3.6V.
  • 524,288 x 8/262,144 x 16 switchable.
  • Single power supply operation - 3.0V only operation for read, erase and program operation.
  • Fast access time: 55R/70/90ns.
  • Low power consumption - 20mA maximum active current - 0.2uA typical standby current.
  • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, an.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX29LV401B_MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX29LV401T
Manufacturer Macronix
File Size 795.00 KB
Description (MX29LV401B/T) 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
Datasheet download datasheet MX29LV401T Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com ADVANCED INFORMATION MX29LV401T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns • Low power consumption - 20mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Programming (9us/11us typical) - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.
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