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MX29LV640ET - FLASH MEMORY

General Description

SYMBOL A0~A21 Q0~Q14 Q15/A-1 CE# WE# OE# RESET# BYTE# PIN NAME Address Input Data Inputs/Outputs Q 1 5 ( Wo r d M o d e ) / L S B a d d r ( B y t e Mode) Chip Enable Input Write Enable Input Output Enable Input Hardware Reset Pin, Active Low Word/Byte Selection Input CE# OE# WE# RESET# WP#/ACC BYTE#

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Full PDF Text Transcription for MX29LV640ET (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MX29LV640ET. For precise diagrams, and layout, please refer to the original PDF.

MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB...

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S • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB(4KW) x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable • Sector Groups Protection / Chip Unprotect - Provides sector group protect function to prevent program or erase operation in the protected sector group - Provides chip unprotect function to allow code changing - Provides temporary sector group unprotect function for code changing in previously protected sector groups • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Latch-up prote