MS3416L464S-08 Overview
It consists of four CMOS 4M x 16 bit (DIMM) with Synchronous DRAMs in TSOP packages and a 2K Utilizes 8ns SDRAM ponents EEPROM in 8-pin TSOP package on a 168-pin glass-epoxy Nonbuffered substrate. Decoupling capacitors are mounted on the printed Single +3.3V + 0.3V power supply circuit board in parallel for each SDRAM. The product is a Fully synchronous;.
MS3416L464S-08 Key Features
- Utilizes 8ns SDRAM ponents EEPROM in 8-pin TSOP package on a 168-pin glass-epoxy
- Nonbuffered substrate. Decoupling capacitors are mounted on the printed
- Single +3.3V + 0.3V power supply circuit board in parallel for each SDRAM. The product is a
- Fully synchronous; all signals registered on positive Dual In-line Memory Module and is intended for mounting et4U. edge
- Internal Synchronous design allows precise cycle controls . pipeline operation; column address can be changed every cloc
- Dual internal banks for hiding row access/precharge on every clock cycle. Range of operating frequencies and
- Programmable burst lengths: 1,2,4, 8 or full page programmable latencies allow the same device to be useful
- Auto Precharged and Auto Refresh Modes for a variety of high bandwidth, high performance memory
- LVTTL patible inputs and outputs system