60R900P Datasheet PDF

DESCRIPTION

MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
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KEY PARAMETERS

Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.9 3 4.5 12.3 Unit V Ω V A nC
● Package & Internal Circuit D G DS G S
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FEATURES

● Low Power Loss by High Speed Switching and Low On-Resistance
● 100% Avalanche Tested
● Green Package – Pb Free Plating, Halogen Free
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APPLICATIONS

● PFC Power Supply Stages
● Switching

APPLICATIONS

● Adapter
● Motor Control
● DC – DC Converters
● Ordering Information Order Code Marking MMD60R900PRH 60R900P Temp. Range -55 ~ 150℃ Package TO-252 (DPAK) Packing Reel & Tube RoHS Status Halogen Free Jul. 2013 Revision 1.0 1 MagnaChip Semiconductor Ltd. MMD60R900P Datasheet
● Absolute Maximum Rating (T...