AMBQ40T120RFRTH Datasheet | MagnaChip

Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(sat), high speed switching and high ruggedness performance and excellent quality. Applications - E-pressor - PTC Heater Features - High Speed Switching & Low Power Loss - VCE(sat) = 1.75V @ IC = 40A - High Input Impedance - trr = 285ns (typ.) - Ultra-Soft, fast recovery anti-parallel diode - Ultra-narrowed VF distribution control - Positive Temperature coefficient for easy paralleling - AEC-Q101 qualified TO-247 Package outline and symbol Absolute Maximum Ratings Characteristics Collector-emitter voltage Gate-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Diode forward current, limited by Tvjmax Diode pulsed current, Pulse time limited by Tvjmax Power dissipation Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C Operating Junction temperature range Storage temperature range TC=25°C TC=100°C TC=25°C TC=100°C TC=25°C TC=100°C Thermal Characteristics Characteristics Thermal resistance junction-to-ambient Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode Symbol VCES VGE IC ICpuls IF IFpuls PD t SC Tvj Tstg Symbol Rth(j-a) Rth(j-c) Rth(j-c) - G : Gate - C : Collector - E : Emitter Rating 1200 ±25 80 40 160 80 40 160 482 242 10 -40~175 -55~150 Rating 40 0.31 0.8 Unit V V A A A A A A W W μs °C...