MBQ75T65PEH - N-channel MOSFET

MagnaChip

Key Features

This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
High ruggedness for motor control.
VCE(sat) positive temperature coefficient.
Very soft, fast recovery anti-parallel diode.
Low EMI.
Maximum junction temperature 175°C.

MBQ75T65PEH n-channel mosfet by MagnaChip - Datasheet Preview

Datasheet Details

Part number	MBQ75T65PEH
Manufacturer	MagnaChip
File Size	776.73 KB
Description	N-channel MOSFET
Datasheet	MBQ75T65PEH Datasheet

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MBQ75T65PEH 650V FieldStop Trench IGBT Datasheet MBQ75T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.