Datasheet4U Logo Datasheet4U.com

MDA0531E - N-Channel Trench MOSFET

General Description

The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.

Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V.

Key Features

  • VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.5V.

📥 Download Datasheet

Datasheet Details

Part number MDA0531E
Manufacturer MagnaChip
File Size 359.25 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDA0531E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MDA1000 Diode Modules TECHSEM
MDA100A SINGLE-PHASE FULL-WAVE BRIDGE Motorola
MDA100G SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER Rectron
MDA101A SINGLE-PHASE FULL-WAVE BRIDGE Motorola
MDA101G SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER Rectron

Other Datasheets by MagnaChip

Part Number Description
MDA0336E N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDA0531E– Common-Drain N-Channel Trench MOSFET 30V MDA0531E Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ General Description The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V. Features VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.