Datasheet4U Logo Datasheet4U.com

MDA0531E - N-Channel Trench MOSFET

Description

The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.

Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V.

Features

  • VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.5V.

📥 Download Datasheet

Datasheet preview – MDA0531E

Datasheet Details

Part number MDA0531E
Manufacturer MagnaChip
File Size 359.25 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDA0531E Datasheet
Additional preview pages of the MDA0531E datasheet.

📁 Similar Datasheet

  • MDA1000 - Diode Modules (TECHSEM)
  • MDA100A - SINGLE-PHASE FULL-WAVE BRIDGE (Motorola)
  • MDA100G - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (Rectron)
  • MDA101A - SINGLE-PHASE FULL-WAVE BRIDGE (Motorola)
  • MDA101G - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (Rectron)
  • MDA102A - SINGLE-PHASE FULL-WAVE BRIDGE (Motorola)
  • MDA102G - SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (Rectron)
  • MDA1044 - MDA1044 (Tesla)
  • MDA1044E - MDA1044E (Tesla)
  • MDA104A - SINGLE-PHASE FULL-WAVE BRIDGE (Motorola)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MDA0531E– Common-Drain N-Channel Trench MOSFET 30V MDA0531E Common-Drain N-Channel Trench MOSFET 30V, 8A, 19mΩ General Description The MDA0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V. Features VDS = 30V ID = 8.0A @ VGS = 10V RDS(ON) < 19mΩ @ VGS = 4.5V < 20mΩ @ VGS = 4.0V < 22mΩ @ VGS = 3.8V < 25mΩ @ VGS = 3.1V < 31mΩ @ VGS = 2.
Published: |