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MDC0531E - Common-Drain N-Channel Trench MOSFET

General Description

The MDC0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability.

Key Features

  •    VDS = 30V ID = 8.0A @VGS = 10V RDS(ON) < 20mΩ @VGS = 10V < 23mΩ @VGS = 4.5V.

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Datasheet Details

Part number MDC0531E
Manufacturer MagnaChip
File Size 933.16 KB
Description Common-Drain N-Channel Trench MOSFET
Datasheet download datasheet MDC0531E Datasheet

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MDC0531E – Common-Drain N-channel Trench MOSFET 30V MDC0531E Common-Drain N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description The MDC0531E uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. Low RDS(ON) and low gate charge operation with gate voltage as low as 2.5V Features    VDS = 30V ID = 8.0A @VGS = 10V RDS(ON) < 20mΩ @VGS = 10V < 23mΩ @VGS = 4.