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MDD1051 - Single N-channel MOSFET

Datasheet Summary

Description

The MDD1051 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications.

Features

  •  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambien.

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Datasheet Details

Part number MDD1051
Manufacturer MagnaChip
File Size 1.06 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDD1051 Datasheet
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MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.
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