Datasheet Details
| Part number | MDD1051 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.06 MB |
| Description | Single N-channel MOSFET |
| Datasheet |
 MDD1051 Datasheet
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General Description
The MDD1051 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications.
Key Features
- VDS = 150V ID = 28A @VGS = 10V RDS(ON) (MAX) < 46.0mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current TC=25oC (Silicon Limited) TC=100oC Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambien.