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MDD1653 - 30V N-Channel Trench MOSFET

Datasheet Summary

Description

The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1653 is suitable device for PWM, Load Switching and general purpose applications.

Features

  • VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 50 50 150 50 25 3 2.1 100 -55~150 Unit V V A A A W W mJ o ID IDM PD PDSM EAS TJ, Tstg Junction and Storag.

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Datasheet Details

Part number MDD1653
Manufacturer MagnaChip
File Size 921.01 KB
Description 30V N-Channel Trench MOSFET
Datasheet download datasheet MDD1653 Datasheet
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MDD1653 – Single N-Channel Trench MOSFET 30V MDD1653 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ General Description The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1653 is suitable device for PWM, Load Switching and general purpose applications. Features VDS = 30V ID = 50A @VGS = 10V RDS(ON) < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V Absoloute Maximun Ratings (Ta = 25 C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (2) (1) o Symbol VDSS VGSS TC=25 C TC=100 C TC=25 C TC=100 C TA=25 C TA=70 C o o o o o o Rating 30 ±20 50 50 150 50 25 3 2.
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