Datasheet Details
| Part number | MDD1903 |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 196.23 KB |
| Description | Single N-channel MOSFET |
| Datasheet |
 MDD1903 Datasheet
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General Description
The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
MDD1903 is suitable device for DC/DC Converters and general purpose applications.
Key Features
- VDS = 100V ID = 11A @VGS = 10V RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg Ratin.