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MDD1903RH - Single N-channel MOSFET

This page provides the datasheet information for the MDD1903RH, a member of the MDD1903 Single N-channel MOSFET family.

Datasheet Summary

Description

The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1903 is suitable device for DC/DC Converters and general purpose applications.

Features

  •  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg.

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Datasheet Details

Part number MDD1903RH
Manufacturer MagnaChip
File Size 196.23 KB
Description Single N-channel MOSFET
Datasheet download datasheet MDD1903RH Datasheet
Additional preview pages of the MDD1903RH datasheet.

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MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.
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