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MDD1903RH - Single N-channel MOSFET

Download the MDD1903RH datasheet PDF. This datasheet also covers the MDD1903 variant, as both devices belong to the same single n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDD1903 is suitable device for DC/DC Converters and general purpose applications.

Key Features

  •  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.0V D G Absolute Maximum Ratings (Tc = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Characteristics Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (1) TC=25oC TC=100oC TC=25oC TC=100oC S Symbol VDSS VGSS ID IDM PD TJ, Tstg.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MDD1903-MagnaChip.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MDD1903RH
Manufacturer MagnaChip
File Size 196.23 KB
Description Single N-channel MOSFET
Datasheet download datasheet MDD1903RH Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MDD1903 – Single N-Channel Trench MOSFET 100V Preliminary – Subject to change without notice MDD1903 Single N-channel Trench MOSFET 100V, 11A, 120mΩ General Description The MDD1903 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1903 is suitable device for DC/DC Converters and general purpose applications. Features  VDS = 100V  ID = 11A @VGS = 10V  RDS(ON) < 120mΩ @VGS = 10V < 135mΩ @VGS = 6.