MDD4N60 Datasheet | MagnaChip

Description These N-channel MOSFET are produced using advanced Magna Chip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  ID = 3.5A  RDS(ON) ≤ 2.0Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching I-PAK (TO-251A) Absolute Maximum Ratings (Ta = 25o C) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt (3) MOSFET dv/dt Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range - Id limited by maximum junction temperature TC=25o C TC=100o C TC=25o C Derate above 25 o C Symbol VDSS VGSS EAR dv/dt dv/dt EAS TJ, Tstg Rating 600 ±30 3.5 2.2 14 67.5 0.54 6.75 4.5 50 170 -55~150 Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC MDD4N60 / MDI4N60 110 1.85 Unit V V A A A W W/ o C m J V/ns V/ns m J o C Unit o C/W Mar. 2014 Version 1.3 Magna Chip Semiconductor...