MDD9N40 Datasheet | MagnaChip

Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 400V  ID = 6A  RDS(ON) ≤ 0.85Ω @ VGS = 10V @ VGS = 10V Applications  Power Supply  PFC  High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25o C) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Repetitive Avalanche Energy(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range - Id limited by maximum junction temperature TC=25o C TC=100o C TC=25o C Derate above 25 o C Symbol VDSS VGSS EAR dv/dt EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Symbol RθJA RθJC Aug. 2021 Version 1.1 Rating 400 ±30 6.0- 3.79- 24- 69.4 0.57 6.94 4.5 300 -55~150 Unit V V A A A W W/ o C m J V/ns m J o C Rating 110 1.75 Unit o C/W Magnachip Semiconductor Ltd. MDD9N40 N-channel MOSFET 400V Ordering Information Part Number MDD9N40RH Marking...