Datasheet Details
| Part number | MDE08N054RH |
|---|---|
| Manufacturer | MagnaChip |
| File Size | 1.08 MB |
| Description | N-Channel MOSFET |
| Datasheet |
 MDE08N054RH Datasheet
|
|
|
General Description
The MDE08N054RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Key Features
- VDS = 80V ID = 120 A @VGS = 10V RDS(ON) < 5.4 mΩ @VGS = 10V 175 oC operating temperature 100% UIL Tested 100% Rg Tested 100% △VDS Tested D D G S TO-263 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25oC (Silicon Limited) Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25oC.