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MDE08N054RH - N-Channel MOSFET

Datasheet Summary

Description

The MDE08N054RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

  •  VDS = 80V  ID = 120 A @VGS = 10V  RDS(ON) < 5.4 mΩ @VGS = 10V  175 oC operating temperature  100% UIL Tested  100% Rg Tested  100% △VDS Tested D D G S TO-263 Absolute Maximum Ratings (TJ = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage TC=25oC (Silicon Limited) Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Package Limited) TC=100oC (Silicon Limited) TA=25oC Power Dissipation Single Pulse Avalanche Energy (3) TC=25oC TC=100oC TA=25oC.

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Datasheet Details

Part number MDE08N054RH
Manufacturer MagnaChip
File Size 1.08 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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MDE08N054RH – Single N-Channel Trench MOSFET 80V MDE08N054RH Single N-channel Trench MOSFET 80V General Description The MDE08N054RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. Features  VDS = 80V  ID = 120 A @VGS = 10V  RDS(ON) < 5.
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