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MDE10N026RH - Single N-channel MOSFET

Key Features

  • The MDE10N026RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial.

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Datasheet Details

Part number MDE10N026RH
Manufacturer MagnaChip
File Size 1.04 MB
Description Single N-channel MOSFET
Datasheet download datasheet MDE10N026RH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDE10N026RH – Single N-Channel Trench MOSFET 100V MDE10N026RH Single N-channel Trench MOSFET 100V, 120A, 2.6mΩ General Description Features The MDE10N026RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.  VDS = 100V  ID = 120A @VGS = 10V  Very low on-resistance RDS(ON) < 2.