MDE10N026RH
MDE10N026RH is Single N-channel MOSFET manufactured by MagnaChip.
Description
Features
The MDE10N026RH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications.
VDS = 100V ID = 120A @VGS = 10V Very low on-resistance RDS(ON)
< 2.6 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested
TO-263
Absolute Maximum Ratings (TJ = 25 o C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2)
TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C (Silicon Limited)
Power Dissipation Single Pulse Avalanche Energy (3)
TC=25o C TC=100o C
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
Jun. 2021. Version 1.4
Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg
Rating
Unit
±20
120 A
416 W
512 m J
-55~175 o C
Symbol RθJA RθJC
Rating 40 0.36
Unit o C/W
Magnachip Semiconductor Ltd.
- Single N-Channel Trench MOSFET 100V
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