Datasheet4U Logo Datasheet4U.com

MDE1752 - N-Channel Trench MOSFET

Datasheet Summary

Description

Low RDS(ON), low gate charge can be offering superior benefit in the application.

Features

  • VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V.

📥 Download Datasheet

Datasheet preview – MDE1752

Datasheet Details

Part number MDE1752
Manufacturer MagnaChip
File Size 664.73 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet MDE1752 Datasheet
Additional preview pages of the MDE1752 datasheet.

📁 Similar Datasheet

  • MDE1932 - N-Channel MOSFET (INCHANGE)
  • MDE-14D101K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D102K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D112K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D121K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D151K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D180M - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D181K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D182K - Metal Oxide Varistors (MDE Semiconductor)
  • MDE-14D201K - Metal Oxide Varistors (MDE Semiconductor)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MDE1752– N-Channel Trench MOSFET 40V, 66A, 8.0mΩ MDE1752 N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 40V ID = 66A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.
Published: |