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MDE9754 - Dual Enhancement N-P Channel Trench MOSFET

Key Features

  • The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS(ON), low gate charge can be offering superior benefit in the.

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Datasheet Details

Part number MDE9754
Manufacturer MagnaChip
File Size 1.03 MB
Description Dual Enhancement N-P Channel Trench MOSFET
Datasheet download datasheet MDE9754 Datasheet

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MDE9754– Dual Enhancement N-P Channel Trench MOSFET MDE9754 Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS(ON), low gate charge can be offering superior benefit in the application. N-Channel VDS = 40V ID = 23A @ VGS = 10V RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V Applications P-Channel VDS = -40V ID = -24.6A@ VGS = -10V RDS(ON) <43mΩ @ VGS = -10V <58mΩ @ VGS = -4.