MDES08N019RH
Description
Features
The MDES08N019RH uses advanced Magnachip’s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
MDES08N019RH is suitable device for Motor Drive applications and general purpose applications.
VDS = 80V ID = 180A @VGS = 10V Very low on-resistance RDS(ON)
< 1.9 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested 175 o C operating temperature
TO-263-7L
Absolute Maximum Ratings (TJ = 25o C)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1) Pulsed Drain Current (2)
TC=25o C (Silicon Limited) TC=25o C (Package Limited) TC=100o C (Silicon Limited)
Power Dissipation Single Pulse Avalanche Energy (3)
TC=25o C TC=100o C
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case
Jun. 2021. V1.2
Symbol VDSS VGSS
IDM PD EAS TJ, Tstg
Rating
Unit...
