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MDES14N045RH - N-channel MOSFET

General Description

The MDES14N045RH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality.

Key Features

  •  VDS = 135V  ID = 180A @VGS = 10V  Very low on-resistance RDS(ON) < 4.5 mΩ @VGS = 10V  175 oC operating temperature  100% UIL Tested  100% Rg Tested  100% △VDS Tested Tab D Pin 4, Tab 1 7 TO-263-7L Absolute Maximum Ratings (TJ = 25 oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=100oC (Silicon Limited) Power Dissipation Single Pulse Avalanche Energy (3) TC=2.

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Datasheet Details

Part number MDES14N045RH
Manufacturer MagnaChip
File Size 1.19 MB
Description N-channel MOSFET
Datasheet download datasheet MDES14N045RH Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDES14N045RH– Single N-Channel Trench MOSFET 135V MDES14N045RH Single N-channel Trench MOSFET 135V, 180A, 4.5mΩ General Description The MDES14N045RH, Magnachip’s latest generation of MV MOSFET Technology, which provides high performance in the lowest Rds(on), fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike, Light electric vehicles, DC/DC converter, and general purpose applications. Features  VDS = 135V  ID = 180A @VGS = 10V  Very low on-resistance RDS(ON) < 4.