MDF10N055TH Datasheet Text
Magnachip Power Technology
Single N-channel Trench MOSFET 100V 5.5mΩ 80A
General description
The MDF10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality.
These devices can also be utilized in industrial applications such as Synchronous Rectification and general Purpose applications.
Features and benefits
- Magnachip’s MOSFET Technology
- Very low on-resistance RDS(on)
- 100% Avalanche / Rg Tested
Applications
- Specifically for Syncronous Rectification
- Switching Applications
Key performance parameters
VDS
100
V
RDS(on), max
0.0055
Ω
ID
80
A
QG Junction temperature, max
85 nC
175 oC
TO-220F
G DS
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