Datasheet4U Logo Datasheet4U.com

MDF16N50G - N-Channel MOSFET

Description

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

  • VDS = 500V VDS = 550V @ Tjmax ID = 16A @VGS = 10V RDS(ON) ≤ 0.35Ω @VGS = 10V.

📥 Download Datasheet

Datasheet preview – MDF16N50G

Datasheet Details

Part number MDF16N50G
Manufacturer MagnaChip
File Size 1.00 MB
Description N-Channel MOSFET
Datasheet download datasheet MDF16N50G Datasheet
Additional preview pages of the MDF16N50G datasheet.

📁 Similar Datasheet

  • MDF10 - SURFACE MOUNT BRIDGE (MIC)
  • MDF10N60GTH - N-Channel MOSFET (INCHANGE)
  • MDF12-1416P - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-1416PC - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-1416PCF - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-1822P - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-1822PC - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-1822PCF - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-TA1416HC - Crimping Contact Directly Mounted on Board (Hirose Electric)
  • MDF12-TA1822HC - Crimping Contact Directly Mounted on Board (Hirose Electric)
Other Datasheets by MagnaChip

Full PDF Text Transcription

Click to expand full text
MDP16N50G/MDF16N50G N-channel MOSFET 500V MDP16N50G / MDF16N50G N-Channel MOSFET 500V, 16.0 A, 0.35Ω General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features VDS = 500V VDS = 550V @ Tjmax ID = 16A @VGS = 10V RDS(ON) ≤ 0.
Published: |