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MDF1723 - N-Channel MOSFET

General Description

The MDF1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDF1723 is suitable device for Synchronous Rectification For Server and general purpose applications.

Key Features

  •  VDS = 40V  ID = 85A @VGS = 10V  RDS(ON) < 2.6 mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D G DS TO-220F Absolute Maximum Ratings Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Re.

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Datasheet Details

Part number MDF1723
Manufacturer MagnaChip
File Size 1.16 MB
Description N-Channel MOSFET
Datasheet download datasheet MDF1723 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDF1723– Single N-Channel Trench MOSFET 40V MDF1723 Single N-channel Trench MOSFET 40V, 85A, 2.6mΩ General Description The MDF1723 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDF1723 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 40V  ID = 85A @VGS = 10V  RDS(ON) < 2.